jiangsu changjiang electronics technology co., ltd sot-89 -3l plastic-encapsulate transistors BF620 transistor (npn) features z low current (max. 50ma) z high voltage (max. 300v). z video output stages. marking dc maximum ratings ( t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 300 v v ceo collector-emitter voltage 300 v v ebo emitter-base voltage 5 v i c collector current -continuous 50 ma p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55 ~ 150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 300 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 300 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =200v, i e =0 10 na emitter cut-off current i ebo v eb =5v, i c =0 50 na dc current gain h fe v ce =20v, i c =25ma 50 collector-emitter saturation voltage v ce(sat) i c =30ma, i b =5ma 0.6 v transition frequency f t v ce =10v, i c =10ma, f=100mhz 60 mhz sot-89 -3l 1. base 2. collector 3. emitter www.cj-elec.com 1 c , nov ,2015 a,jun,2011
min m a x min m a x a 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 d 4.400 4.600 0.173 0.181 d1 e 2.300 2.600 0.091 0.102 e1 3.940 4.250 0.155 0.167 e e1 l 0.900 1.200 0.035 0.047 symbol dimensions in millimeters dimensions in inches 1.550 ref. 0.061 ref. 1.500 typ. 0.060 typ. 3.000 typ. 0.118 typ. 6 2 7 / 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 7 / 6 x j j h v w h g 3 d g / d \ r x w www.cj-elec.com 2 c , nov ,2015
6 2 7 / 7 d s h d q g 5 h h o www.cj-elec.com 3 c , nov ,2015
|
